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d a t a sh eet preliminary speci?cation supersedes data of 1995 nov 16 file under integrated circuits, ic01 1997 jul 15 integrated circuits TDA1300t; TDA1300tt photodetector amplifiers and laser supplies
1997 jul 15 2 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt features six input buffer amplifiers with low-pass filtering with virtually no offset hf data amplifier with a high or low gain mode two built-in equalizers for single or double speed mode ensuring high playability in both modes full automatic laser control including stabilization and an on/off switch and containing a separate supply v ddl for power reduction applicable with n-sub laser with n-sub or p-sub monitor diode adjustable laser bandwidth and laser switch-on current slope protection circuit preventing laser damage due to supply voltage dip optimized interconnect between pick-up detector and tda1301 wide supply voltage range wide temperature range low power consumption. general description the TDA1300 is an integrated data amplifier and laser supply for three beam pick-up detectors applied in a wide range of mechanisms for compact disc (cd) and read only optical systems. it offers 6 amplifiers which amplify and filter the focus and radial diode signals adequately and provides an equalized rf signal for single or double speed mode which can be switched by means of the speed control pin. the device can handle astigmatic, single foucault and double foucault detectors and is applicable with all n-sub lasers and n-sub or p-sub monitor diode units. after a single initial adjustment the circuit keeps control over the laser diode current resulting in a constant light output power independent of ageing. the chip is mounted in a small so24 or tssop24 package enabling mounting close to the laser pick-up unit on the sledge. quick reference data ordering information symbol parameter conditions min. typ. max. unit v dd supply voltage 3 - 5.5 v diode current ampli?ers (n = 1 to 6) g d(n) diode current gain 1.43 1.55 1.67 i o(d) diode offset current -- 100 na b 3 db bandwidth i i(d) = 1.67 m a50 -- khz rfe ampli?er (built-in equalizer) t d(eq) equalization delay f i = 0.3 mhz - 320 - ns t d(f) ?atness delay double speed - 5 - ns laser supply i o(l) output current v ddl =3v --- 100 ma type number package name description version TDA1300t so24 plastic small outline package; 24 leads; body width 7.5 mm sot137-1 TDA1300tt tssop24 plastic thin shrink small outline package; 24 leads; body width 4.4 mm sot355-1
1997 jul 15 3 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt block diagram fig.1 block diagram. handbook, full pagewidth 1.5x i/v 1.5x 1.5x 1.5x 1.5x 1.5x 1 2 3 4 5 6 i6 in id6 out i5 in i4 in i3 in i2 in i1 in i6 23 2 o6 id5 out 5 o5 id4 out 1 o4 id3 out 3 o3 id2 out 6 o2 id1 out 4 9 10 8 v ddl 16 lo 7 ldon rf rfe o1 95, 120, 134 or 240 k w i5 20 i4 24 i3 22 i2 19 i1 hg ls mi 13 cl v dd v dd gnd 21 v gap ota ilo on/off supply TDA1300t adj 11 12 17 18 15 14 -4 i i(central) (n-sub) or i adj (p-sub) v mon (n-sub) or i mon (p-sub) mbg474
1997 jul 15 4 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt pinning symbol pin description o4 1 current ampli?er 4 output o6 2 current ampli?er 6 output o3 3 current ampli?er 3 output o1 4 current ampli?er 1 output o5 5 current ampli?er 5 output o2 6 current ampli?er 2 output ldon 7 control pin for switching the laser on and off v ddl 8 laser supply voltage rfe 9 equalized output voltage of sum signal of ampli?ers 1 to 4 rf 10 unequalized output hg 11 control pin for gain switch ls 12 control pin for speed switch cl 13 external capacitor adj 14 p-sub monitor (if connected via resistor to gnd); n-sub monitor (if connected to v dd ) gnd 15 ground (substrate connection) lo 16 laser output; current output mi 17 monitor diode input (laser) v dd 18 supply i2 19 photo detector input 2 (central) i5 20 photo detector input 5 (satellite) i1 21 photo detector input 1 (central) i3 22 photo detector input 3 (central) i6 23 photo detector input 6 (satellite) i4 24 photo detector input 4 (central) fig.2 pin configuration. h andbook, halfpage TDA1300t 1 2 3 4 5 6 7 8 9 10 11 12 o4 o6 o3 o1 o5 o2 ldon v ddl rfe rf hg ls i4 i6 i3 i1 i5 i2 v dd mi lo gnd adj cl 24 23 22 21 20 19 18 17 16 15 14 13 mbg472
1997 jul 15 5 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt functional description the TDA1300t; TDA1300tt can be divided into two main sections: laser control circuit section photo diode signal filter and amplification section. laser control circuit section the main function of the laser control circuit is to control the laser diode current in order to achieve a constant light output power. this is done by monitoring the monitor diode. there is a fixed relation between light output power of the laser and the current of the monitor diode. the circuit can handle p-sub or n-sub monitor diodes. n-sub monitor in this event pin 14 (adj) must be connected to the positive supply voltage v dd to select the n-sub mode. with an adjustable resistor (r adjn ) across the diode the monitor current can be adjusted (and so the laser light output power) if one knows that the control circuit keeps the monitor voltage v mon at a constant level of approximately 150 mv. p-sub monitor in this event pin 14 (adj) is connected via resistor r adjp to ground. the p-sub mode is selected and pin 14 (adj) acts as reference band gap voltage, providing together with r adjp an adjustable current l adj . now the control circuit keeps the monitor current at a level which is 10l adj . the circuit is built up in three parts: the first part is the input stage which is able to switch between both modes (n-sub or p-sub). the second part is the integrator part which makes use of an external capacitor c l . this capacitor has two different functions: C during switch-on of the laser current, it provides a current slope of typically: (a/s) C after switch-on it ensures that the bandwidth equals (hz) in case of p-sub monitor or d i o(l) t d ------------- - 10 6 C c l ----------- @ b p kg ext 90 9 C 10 c l i mon ------------------------------------------------- - @ (hz) in case of n-sub monitor, where g ext represents the ac gain of an extra loop amplifier, if applied, and k = d i mon / d i l which is determined by the laser/monitor unit. i mon is the average current (pin 17) at typical light emission power of the laser diode. the third part is the power output stage, its input being the integrator output signal. this stage has a separate supply voltage (v ddl ), thereby offering the possibility of reduced power consumption by supplying this pin with the minimum voltage necessary. it also has a laser diode protection circuit which comes into action just before the driving output transistor will get saturated due to a large voltage dip on v ddl . saturation will result in a lower current of the laser diode, which normally is followed immediately by an increment of the voltage of the external capacitor c l . this could cause damage to the laser diode at the end of the dip. the protection circuit prevents an increment of the capacitor voltage and thus offers full protection to the laser diode under these circumstances. photo diode signal ?lter and ampli?cation section this section has 6 identical current amplifiers. amplifiers 1 to 4 are designed to amplify the focus photo diode signals. each amplifier has two outputs: an lf output and an internal rf output. amplifiers 5 and 6 are used for the radial photo diode currents and only have an lf output. all 6 output signals are low-pass filtered with a corner frequency at 69 khz. the internal rf output signals are summed together and converted to a voltage afterwards by means of a selectable transresistance. this transresistance r rf can be changed between 140 k w (3.3 v application) or 240 k w (5 v application) in combination with the p-sub monitor. in the event of the n-sub monitor selection, r rf can be changed between 70 k w (3.3 v application) and 120 k w (5 v application). the rf signal is available directly at pin 10 but there is also an unfiltered signal available at pin 9. the used equalization filter has 2 different filter curves: one for single-speed mode one for double-speed mode. b n r adjn c l ---------------- kg ext 870 9 C 10 @
1997 jul 15 6 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt table 1 gain and monitor modes note 1. logic 1 or not connected. table 2 speed and laser modes; note 1 notes 1. 1 = high voltage (v dd ); 0 = low voltage (gnd); x = dont care. 2. if not connected. 3. x = dont care. limiting values in accordance with the absolute maximum rating system (iec 134). notes 1. classification a: human body model; c = 100 pf; r = 1500 w ; v es = 2000 v. charge device model: c = 200 pf; l = 2.5 m h; r = 0 w ; v es = 250 v. 2. equivalent to discharging a 100 pf capacitor through a 1.5 k w series resistor. pin monitor mode r rf (k w ) intended application area hg adj 0r adjp connected to ground p-sub 140 3.3 v 0 1 n-sub 70 1 (1) r adjp connected to ground p-sub 240 5v 1 (1) 1 n-sub 120 pin default value (2) mode speed laser single double on off ls 1 1 0 x (3) x (3) ldon 1 x (3) x (3) 10 symbol parameter conditions min. max. unit v dd supply voltage - 8v p max maximum power dissipation - 300 mw t stg storage temperature - 65 +150 c t amb operating ambient temperature TDA1300t - 40 +85 c TDA1300tt - 40 +70 c v es (1) electrostatic handling pin 16 note 2 - 2+2kv electrostatic handling (all other pins) - 3+3kv
1997 jul 15 7 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt thermal characteristics quality specification in accordance with snw-fq-611 part e . the numbers of the quality specification can be found in the quality reference handbook . the handbook can be ordered using the code 9397 750 00192. characteristics v dd = 3.3 v; v ddl = 2.5 v; t amb =25 c; r adj =48k w ; hg = logic 1; ls = logic 1; with an external low-pass ?lter (r ext = 750 w ; c ext = 47 pf) connected at the rfe output pin. symbol parameter value unit r th j-a thermal resistance from junction to ambient in free air TDA1300t 60 k/w TDA1300tt 128 k/w symbol parameter conditions min. typ. max. unit supply i dd supply current laser off - 7 - ma v dd ampli?er supply voltage 3 - 5.5 v v ddl laser control supply voltage 2.5 - 5.5 v p power dissipation laser off; v dd =3v - 20 - mw diode current ampli?ers (n = 1 to 6; m = 1 to 6) i i(d) diode input current note 1 -- 10 m a i n(i)(eq) equivalent noise input current - 1 - pa/ ? hz v i(d) diode input voltage i i(d) = 1.67 m a - 0.9 - v v o(d) diode output voltage - 0.2 - v dd - 1v g d(n) diode current gain i i(d) = 1.67 m a; v o(d(n)) = 0 v; note 2 1.43 1.55 1.67 i o(d) diode offset current i i(central) =i i(satellite) =0; note 3 -- 100 na z o(d) output impedance i i(d) = 1.67 m a; v o(d(n)) =0v 500 -- k w b 3 db bandwidth i i(d) = 1.67 m a5068 - khz g mm mismatch in gain between ampli?ers i i(d) = 1.67 m a; v o(d(n)) =v o(d(m)) -- 3%
1997 jul 15 8 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt data ampli?er; equalized single and double speed v o(rf) dc output voltage i i(central) =0 - 0.3 - v r rf transresistance n-sub monitor mode (low gain); note 3 56 70 84 k w n-sub monitor mode (high gain); note 3 96 120 144 k w p-sub monitor mode (low gain); note 4 112 140 168 k w p-sub monitor mode (high gain); note 4 200 240 285 k w v o(rf)(max) maximum output voltage note 5 -- v dd - 1.2 v sr rf rf slew rate v sr = 1 v (peak-to-peak) - 6 - v/ m s z o(rf) rf output impedance f i = 1 mhz - 100 -w t d(eq) equalization delay - 320 - ns t d(f) ?atness delay ( f / w ) ls = 1; note 6 - 10 - ns ls = 0; note 6 - 5 - ns g/g data ampli?er gain ratio note 6 4.5 6 - db b rf unequalized output bandwidth i i(d) = 1.67 m a35 - mhz control pins ldon, ls and hg (with 47 k w internal pull-up resistor) v il low level input voltage - 0.2 - +0.5 v v ih high level input voltage v dd - 1 - v dd + 0.2 v i il low level input current -- 100 m a laser output v o(l) output voltage i o(l) = 100 ma - 0.2 - v ddl - 0.7 v i o(l) output current -- - 100 ma d i o(l) / d t slew rate output current c l = 1 nf (see fig.8) - 3.4 - ma/ m s monitor diode input v ref virtual reference voltage n-sub monitor mode 130 150 170 mv i l leakage current n-sub monitor mode - 1 - na v i(mon) monitor input voltage p-sub monitor mode - v dd - 0.7 - v i i(mon) monitor input current p-sub monitor mode -- 2ma d t reference temperature drift n-sub monitor mode - 40 - ppm rs ref reference supply rejection n-sub monitor mode -- 1% symbol parameter conditions min. typ. max. unit
1997 jul 15 9 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt notes to the characteristics 1. the maximum input current is defined as the current in which the gain g d(n) reaches its minimum. increasing the supply voltage to v dd = 5 v increases the maximum input current (see also figs 4 and 5). 2. the gain increases if a larger supply voltage is used (see fig.6). 3. transresistance of 70 k w and 120 k w (typical) is only available in n-sub monitor mode (see table 1). 4. transresistance of 140 k w and 240 k w (typical) is only available in p-sub monitor mode (see table 1). 5. output voltage swing will be: v o(rf)(swing) =v o(rf)(max) - v o(rf)(p-p) . 6. for single speed the data amplifier gain ratio is defined as gain difference between 1 mhz and 100 khz, while the flatness delay is defined up to 1 mhz (see fig.7). for double speed the data amplifier gain ratio is defined as gain difference between 2 mhz and 200 khz, while the flatness delay is defined up to 2 mhz. reference source v adj and laser adjustment current i adj v ref reference voltage r adj =48k w 1.15 1.24 1.31 mv d t reference temperature drift - 40 - ppm rs ref reference supply rejection -- 1% i adj adjustment current r adj = 5.6 k w-- 200 m a z i input impedance r adj = 4.8 k w- 1 - k w m multiplying factor (i mon /i adj ) - 10 -- symbol parameter conditions min. typ. max. unit
1997 jul 15 10 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt transfer functions; see fig.6 the equalized amplifier including c ext and r ext has the following transfer functions, where rfe refers to equalized output only and rf refers to equalized and not equalized outputs. f or single speed (sp = logic 1) (1) f or double speed (sp = logic 0) (2) the denominator forms the denominator of a bessel low-pass filter. symbols used in equations (1) and (2) are explained in table 3. table 3 transresistance symbol description typ. unit k internally de?ned 4 w os / w 1 internally de?ned 1.094 q internally de?ned 0.691 w od =2 w os internally de?ned 17.6 10 - 6 rad/s r rf see chapter characteristics - r ext external resistor 750 w c ext external capacitor 47 pf v rfe i i(central) ------------------ - r rf 1ks 2 C ? ?? w 2 os 11q s w os s 2 w 2 os + + ------------------------------------------------------------------------ 1 1s w 1 + ----------------------- 1 1sr ext c ext + ----------------------------------------- - = v rfe i i(central) ------------------ - r rf 1ks 2 C ? ?? w 2 os 11q s w od s 2 w 2 od + + ------------------------------------------------------------------------ - 1 1sr ext c ext + ----------------------------------------- - =
1997 jul 15 11 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt fig.3 maximum input current as a function of v dd . - = test limit. handbook, full pagewidth 5.5 24 i i(max) ( m a) 8 3 3.5 4 4.5 5 v dd (v) mbg471 12 16 20 handbook, full pagewidth 40 40 i o ( m a) 0 010 30 mbg469 20 30 10 20 (1) i i ( m a) (2) (3) fig.4 output current as a function of input current. ? = test limit. (1) g d(n) = 1.43. (2) v dd = 5.5 v. (3) v dd = 3.4 v.
1997 jul 15 12 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt fig.5 gain as a function of v dd . = test limit. handbook, full pagewidth 5.5 1.75 i o /i i (ma) 1.35 3 3.5 4 4.5 5 v dd (v) mbg470 1.45 1.55 1.65 fig.6 transfer of equalizer. (1) single speed. (2) double speed. handbook, full pagewidth - 1.0 9.0 mbg468 10 4 10 3 (1) (1) (2) (2) 10 2 10 1.0 3.0 5.0 7.0 gain (db) 200 450 250 300 350 400 t d (ns) f (khz)
1997 jul 15 13 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt internal pin configuration fig.7 equivalent internal pin diagrams. d book, full pagewidth v dd v dd v ddl lo adj v dd v dd v dd v dd v dd gnd ldon hg ls from ldon circuitry cl 47 k w rf rfe v dd mi p-sub mode v dd mi n-sub mode i1 i2 i3 i4 i5 i6 o1 o2 o3 o4 o5 o6 v dd mbg475
1997 jul 15 14 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt application information handbook, full pagewidth diode amplifier and laser supply i1 i2 i3 i4 i5 i6 mi lo o1 o2 o3 o4 o5 o6 d1 d2 d3 d4 r1 ldon r2 v rl v rh nrst otd clo xtli xtlo sicl sida focus actuator radial actuator sledge sild xtlr ts1 ts2 ldon TDA1300 tda1301 digital servo ic power amplifier (tda7072/7073) pll photo- diodes mon la n-sub monitor configuration 2.5 to 5 v v dd v dd v dda v ddd v dda v ddd v ddl cl c l adj gnd 1 nf cl c l 1 nf hg ls rf/ rfe hg ls rf/ rfe diode amplifier and laser supply i1 i2 i3 i4 i5 i6 mi lo o1 o2 o3 o4 o5 o6 ldon TDA1300 photo- diodes mon la p-sub monitor configuration 2.5 to 5 v v dd v ddl adj gnd clk decoder (saa7345) motor control subcode decoder power amp left right display processor keybord display to spindle motor end_stop_switch clk r adjp r adjn ra fo sl v ssd v ssk mbg473 fig.8 application diagram for cd player.
1997 jul 15 15 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt package outlines unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z y w v q references outline version european projection issue date iec jedec eiaj mm inches 2.65 0.30 0.10 2.45 2.25 0.49 0.36 0.32 0.23 15.6 15.2 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.1 0.4 sot137-1 x 12 24 w m q a a 1 a 2 b p d h e l p q detail x e z c l v m a 13 (a ) 3 a y 0.25 075e05 ms-013ad pin 1 index 0.10 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.61 0.60 0.30 0.29 0.050 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 e 1 0 5 10 mm scale so24: plastic small outline package; 24 leads; body width 7.5 mm sot137-1 95-01-24 97-05-22
1997 jul 15 16 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt unit a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm 0.15 0.05 0.95 0.80 0.30 0.19 0.2 0.1 7.9 7.7 4.5 4.3 0.65 6.6 6.2 0.4 0.3 8 0 o o 0.13 0.1 0.2 1.0 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 sot355-1 mo-153ad 93-06-16 95-02-04 0.25 0.5 0.2 w m b p z e 112 24 13 pin 1 index q a a 1 a 2 l p q detail x l (a ) 3 h e e c v m a x a d y 0 2.5 5 mm scale tssop24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm sot355-1 a max. 1.10
1997 jul 15 17 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). re?ow soldering reflow soldering techniques are suitable for all so and tssop packages. reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several techniques exist for reflowing; for example, thermal conduction by heated belt. dwell times vary between 50 and 300 seconds depending on heating method. typical reflow temperatures range from 215 to 250 c. preheating is necessary to dry the paste and evaporate the binding agent. preheating duration: 45 minutes at 45 c. wave soldering so wave soldering techniques can be used for all so packages if the following conditions are observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow. the package footprint must incorporate solder thieves at the downstream end. tssop wave soldering is not recommended for tssop packages. this is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. if wave soldering cannot be avoided, the following conditions must be observed: a double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. the longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. even with these conditions, do not consider wave soldering tssop packages with 48 leads or more, that is tssop48 (sot362-1) and tssop56 (sot364-1) . m ethod (so and tssop) during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. maximum permissible solder temperature is 260 c, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 c within 6 seconds. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. repairing soldered joints fix the component by first soldering two diagonally- opposite end leads. use only a low voltage soldering iron (less than 24 v) applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
1997 jul 15 18 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1997 jul 15 19 philips semiconductors preliminary speci?cation photodetector ampli?ers and laser supplies TDA1300t; TDA1300tt notes
internet: http://www.semiconductors.philips.com philips semiconductors C a worldwide company ? philips electronics n.v. 1997 sca55 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland: ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 1231, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america: rua do rocio 220, 5th floor, suite 51, 04552-903 s?o paulo, s?o paulo - sp, brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain: balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 632 2000, fax. +46 8 632 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2865, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777 for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805 4455, fax. +61 2 9805 4466 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 160 1010, fax. +43 160 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada: philips semiconductors/components, tel. +1 800 234 7381 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: prags boulevard 80, pb 1919, dk-2300 copenhagen s, tel. +45 32 88 2636, fax. +45 31 57 0044 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580920 france: 4 rue du port-aux-vins, bp317, 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 99 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece: no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: see singapore ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108, tel. +81 3 3740 5130, fax. +81 3 3740 5077 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381 middle east: see italy printed in the netherlands 547027/50/03/pp20 date of release: 1997 jul 15 document order number: 9397 750 01673

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